PART |
Description |
Maker |
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
SST5114 SST5116 |
1K x 8 Dual-Port Static RAM 64-Kbit (8K x 8) Static RAM 晶体管|场效应| P通道| SOT - 23封装
|
Omron Electronics, LLC
|
TC55257DFI TC55257DFTI TC55257DPI-70V TC55257DPI-8 |
(TC55257xxx) STATIC RAM 32K Word x 8 Static RAM(32Kx 8 静RAM) 32K的字× 8静态RAM2K的字× 8静态RAM)的
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IC62VV51216LL IC62VV51216L IC62VV51216L-70B IC62VV |
512K x 16 bit 1.8V and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM 8K x 8 Static RAM RoboClock® High-speed Multi-phase PLL Clock Buffer x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
|
KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
|
Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
|
IDT71T016SA 71T016SA_DS_22694 IDT71T016 |
2.5V 64K x 16 Static RAM From old datasheet system 2.5V CMOS Static RAM
|
IDT
|
AM9044 AM9044B AM9044BDC AM9044BDCB AM9044BPC AM90 |
4096x1 Static RAM 4K X 1 STANDARD SRAM, 200 ns, CDIP18 4096x1 Static RAM 4K X 1 STANDARD SRAM, 450 ns, CDIP18 4096x1 Static RAM 4K X 1 STANDARD SRAM, 250 ns, CDIP18 4096x1 Static RAM 4K X 1 STANDARD SRAM, 450 ns, PDIP18 4096 x 1 Static RAM
|
Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|